BU2508DF DATASHEET PDF

BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, bu2508cf, datasheet. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Typical DC current gain. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Refer to mounting instructions for F-pack envelopes. Typical collector-emitter saturation voltage. Typical base-emitter saturation voltage. II Extension for repetitive pulse operation.

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High collectorbase voltagevcbov high speed switching. No liability will be accepted by the publisher for any consequence of its use. July 1 Rev 1.

BU2508DF Datasheet, Equivalent, Cross Reference Search

July 7 Rev 1. This data sheet contains target or goal specifications for product development. Budf transistor equivalent substitute crossreference search.

Buaf transistor equivalent substitute crossreference search. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Budf philips semiconductors, budf datasheet.

July 5 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Stress above dtaasheet or more of the limiting values may cause permanent damage to the device. Typical collector storage and fall time. Application information Where application information is given, it is advisory and does not form part of the specification.

SOT; The seating plane is electrically isolated from all terminals.

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Buaf datasheet, equivalent, cross reference search. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Bu2508dg 2 Rev 1. Forward bias safe operating area.

These are stress ratings only and operation of the device at bu2508dv or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Exposure to limiting satasheet for extended periods may affect device reliability. Npn triple diffused buaf planar silicon transistor color tv bu2508dff output applicationsno damper diode to3pml. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. July 6 Rev 1.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Silicon diffused power transistor buaf datasheet catalog. This data sheet contains final product specifications. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.

Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

C 1 Turn-off current. C I Region of permissible DC operation.

Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.